feb.1999 BCR12KM-14 outline drawing dimensions in mm to-220fn mitsubishi semiconductor triac ? BCR12KM-14 medium power use insulated type, planar passivation type application switching mode power supply, light dimmer, electric flasher unit, hair driver, control of household equipment such as tv sets ? stereo ? refrigerator ? washing machine ? infrared kotatsu ? carpet, solenoid drivers, small motor control, copying machine, electric tool l i t (rms) ................................................................ 12a l v drm ................................................................. 700v l i fgt ! , i rgt ! , i rgt # .................................... 30ma l v iso .................................................................. 2000v ] 1. gate open. i t (rms) i tsm i 2 t p gm p g (av) v gm i gm t j t stg v iso symbol a a a 2 s w w v a c c g v 12 120 60 5 0.5 10 2 C40 ~ +125 C40 ~ +125 2.0 2000 symbol 14 700 840 v v maximum ratings value corresponding to 1 cycle of half wave 60hz, surge on-state current v drm v dsm rms on-state current surge on-state current i 2 t for fusing peak gate power dissipation average gate power dissipation peak gate voltage peak gate current junction temperature storage temperature weight isolation voltage parameter parameter voltage class unit ratings unit conditions commercial frequency, sine full wave 360 conduction, tc=81 c 60hz sinewave 1 full cycle, peak value, non-repetitive typical value t a =25 c, ac 1 minute, t 1 t 2 g terminal to case repetitive peak off-state voltage ] 1 non-repetitive peak off-state voltage ] 1 a measurement point of case temperature ] a t 1 terminal t 2 terminal gate terminal 15 0.3 14 0.5 10 0.3 2.8 0.2 f 3.2 0.2 1.1 0.2 1.1 0.2 0.75 0.15 2.54 0.25 2.54 0.25 2.6 0.2 4.5 0.2 0.75 0.15 3 0.3 3.6 0.3 6.5 0.3 a e
feb.1999 ] 2. the critical-rate of rise of the off-state commutating voltage is shown in the table below. ] 3. the contact thermal resistance r th (c-f) in case of greasing is 0.5 c/w. i drm v tm v fgt ! v rgt ! v rgt # i fgt ! i rgt ! i rgt # v gd r th (j-c) (dv/dt) c t j =125 c, v drm applied t c =25 c, i tm =20a, instantaneous measurement t j =25 c, v d =6v, r l =6 w , r g =330 w t j =25 c, v d =6v, r l =6 w , r g =330 w t j =125 c, v d =1/2v drm junction to case ] 3 unit repetitive peak off-state current on-state voltage gate trigger voltage gate trigger current gate non-trigger voltage thermal resistance critical-rate of rise of off-state commutating voltage limits max. 2.0 1.6 1.5 1.5 1.5 30 30 30 3.0 ! @ # ! @ # typ. min. 0.2 ] 2 ma v v v v ma ma ma v c/w v/ m s symbol parameter test conditions electrical characteristics mitsubishi semiconductor triac ? BCR12KM-14 medium power use insulated type, planar passivation type voltage class v drm (v) 14 700 symbol (dv/dt) c test conditions commutating voltage and current waveforms (inductive load) unit supply voltage time time time main current main voltage (di/dt) c v d (dv/dt) c l r v/ m s 10 min. 1. junction temperature t j =125 c 2. rate of decay of on-state commutating current (di/dt) c =C6.0a/ms 3. peak off-state voltage v d =400v performance curves maximum on-state characteristics on-state current (a) on-state voltage (v) rated surge on-state current surge on-state current (a) conduction time (cycles at 60hz) 10 0 23 5710 1 80 40 23 5710 2 44 120 160 200 60 20 100 140 180 0 3.8 0.6 1.4 2.2 3.0 1.0 1.8 2.6 3.4 10 2 7 5 3 2 10 1 7 5 3 2 10 0 7 5 3 2 10 ? t j = 125 c t j = 25 c
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